| PART |
Description |
Maker |
| CHA-20NF |
(CHA-20xx) Coaxial Attenuators
|
Component General
|
| RFL4N12 RFL4N15 |
4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs 4000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF
4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs
|
Intersil, Corp.
Intersil Corporation
|
| NPC50-100G-50R0G NPC50-50G-50R0F NPC50-50G-50R0J N |
0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 12400 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 12400 MHz 100 ohm RF/MICROWAVE TERMINATION
0 MHz - 400 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 400 MHz 100 ohm RF/MICROWAVE TERMINATION
0 MHz - 2500 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Marktech Optoelectronics
Ecliptek, Corp.
Daishinku, Corp.
Electronic Theatre Controls, Inc.
飞思卡尔半导体(中国)有限公司
Pulse Engineering, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| RK73B1JLTPD3R9G RK73B2ALTPD3R9G |
RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 2 %, 400 ppm, 3.9 ohm, SURFACE MOUNT, 0603 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 2 %, 400 ppm, 3.9 ohm, SURFACE MOUNT, 0805 CHIP
|
KOA Speer Electronics,Inc.
|
| SIHF730A-E3 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| IRF360 |
25 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
HARRIS SEMICONDUCTOR
|
| IRFR320BTM IRFR320BTF |
3.1 A, 400 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
| RFP8P10 |
8A, 100V, 0.400 Ohm, P-Channel Power MOSFET
|
Intersil Corporation
|
| 2N6786TX |
1.25 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
HARRIS SEMICONDUCTOR
|
| MTW16N40E |
TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
|
MOTOROLA[Motorola, Inc]
|
|
